APT30GP60BDQ1G Microsemi Power Products Group, APT30GP60BDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT30GP60BDQ1G
• Description: IGBT 600V 100A 463W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30GP60BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 100A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT30GP60BDQ1GMP; APT30GP60BDQ1GMP

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
T
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
J
J
= 125°C
0.5
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
2
J
8
= 125°C
0
T
J
1.0
T
= 25°C
4
J
T
25
= 25°C
10
J
= -55°C
T
1.5
50
J
6
= -55°C
12
75
<0.5 % DUTY CYCLE
2.0
250µs PULSE TEST
8
100 125 150
T
J
= 25°C.
14
2.5
10
J
= 25°C)
3.0
16
12
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
FIGURE 2, Output Characteristics (T
-50
V
-55
0
0 10 20 30 40 50 60 70 80 90 100
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
T
= 30A
-25
-25
J
0.5
V
= 125°C
T
GE
T
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
0
0
GATE CHARGE (nC)
T
1.0
J
V
= 25°C
25
CE
T
25
J
= 120V
= -55°C
1.5
50
50
75 100 125 150
2.0
75
V
CE
2.5
= 480V
100
J
= 125°C)
125
3.0