IXBH12N300 IXYS, IXBH12N300 Datasheet

IGBT 3000V 30A 160W TO247

IXBH12N300

Manufacturer Part Number
IXBH12N300
Description
IGBT 3000V 30A 160W TO247
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet

Specifications of IXBH12N300

Voltage - Collector Emitter Breakdown (max)
3000V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 12A
Current - Collector (ic) (max)
30A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
3000
Ic25, Tc=25°c, (a)
30
Ic90, Tc=90°c, (a)
-
Vce(sat), Typ, Tj=25°c, (v)
3.2
Tf Typ, Tj=25°c, (ns)
530
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.78
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXBH12N300
Manufacturer:
FUJI
Quantity:
10 000
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 250µA, V
= 250µA, V
= 12A, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 25°C
= 25°C, 1ms
= 0V, V
= 110°C
= 0.8 • V
= 15V, T
TM
Monolithic
GE
GE
CES
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
, V
= V
= 0V
GE
GE
= 0V
GE
= 1MΩ
G
= 30Ω
Preliminary Technical Information
T
T
J
J
= 125°C
= 125°C
IXBH12N300
IXBT12N300
3000
Min.
3.0
Characteristic Values
V
-55 ... +150
-55 ... +150
CES
I
Maximum Ratings
CM
≤ 2400
1.13/10
3000
= 30
3000
± 20
± 30
100
160
150
300
260
Typ.
2.8
3.5
30
12
6
4
±100
Max.
Nm/lb.in.
5.0
3.2
25
1 mA
nA
µA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
g
TO-268 (IXBT)
G = Gate
E = Emitter
V
I
V
TO-247 (IXBH)
Features
Advantages
Applications:
C110
International Standard Packages
Anti-Parallel Diode
Low Conduction Losses
Low Gate Drive Requirement
High Power Density
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
High Blocking Voltage
CES
CE(sat)
G
C
E
G
≤ ≤ ≤ ≤ ≤ 3.2V
= 3000V
= 12A
E
C
TAB = Collector
= Collector
DS100120(03/09)
C (TAB)
C (TAB)

Related parts for IXBH12N300

IXBH12N300 Summary of contents

Page 1

... V = 0.8 • CES CE CES 0V ± 20V GES 12A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXBH12N300 IXBT12N300 Maximum Ratings 3000 = 1MΩ 3000 ± 20 ± 100 = 30Ω ≤ 2400 V CES 160 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... R 4.32 S 6.15 BSC TO-268 (IXBT) Outline Max. 2.1 V µs A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXBH12N300 IXBT12N300 ∅ Drain Tab - Drain Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1 ...

Page 3

... Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25ºC - 40º 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7 Volts GE IXBH12N300 IXBT12N300 CE(sat 24A 12A 100 125 150 7.5 8.0 8.5 9.0 IXYS REF: B_12N300(4P)03-05-09 ...

Page 4

... Fig. 8. Forward Voltage Drop of Intrinsic Diode 25º 0.0 0.5 1.0 1 Volts F Fig. 10. Capacitance MHz C ies C oes C res Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXBH12N300 IXBT12N300 T = 125ºC J 2.0 2 ...

Page 5

... Degrees Centigrade J Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance d(off ) T = 125º 15V 1250V 12A 24A Ohms G IXBH12N300 IXBT12N300 T = 125º 25º 200 190 180 I = 12A 170 C 160 150 I = 24A C 140 105 115 125 900 800 700 600 500 400 300 ...

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