IXBF20N300 IXYS, IXBF20N300 Datasheet

IGBT 3000V 27A 110W ISOPLUSI4

IXBF20N300

Manufacturer Part Number
IXBF20N300
Description
IGBT 3000V 27A 110W ISOPLUSI4
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet

Specifications of IXBF20N300

Voltage - Collector Emitter Breakdown (max)
3000V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 20A
Current - Collector (ic) (max)
27A
Power - Max
110W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Vces, (v)
3000
Ic25, Tc=25°c, (a)
27
Ic90, Tc=90°c, (a)
15
Vce(sat), Typ, Tj=25°c, (v)
3.2
Tf Typ, Tj=25°c, (ns)
504
Gate Drive, (v)
15
Rthjc, Max, (k/w)
1.13
Package Style
ISOPLUS I4-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
(Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 25°C to 150°C, R
= 250μA, V
= 250μA, V
= 20A, V
= 25°C to 150°C
= 25°C
= 90°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8 • V
= 15V, T
TM
Monolithic
GE
GE
CES
VJ
= ± 20V
GE
CE
= 15V, Note 1
= 125°C, R
, V
= 0V
= V
GE
GE
= 0V
Note 2, T
GE
= 1M
G
= 20
Preliminary Technical Information
Ω
J
Ω
= 125°C
T
J
= 125°C
20..120 / 4.5..27
IXBF20N300
V
CE
3000
2.5
Min.
-55 ... +150
-55 ... +150
Characteristic Values
0.8 • V
I
CM
Maximum Ratings
= 50
4000
3000
3000
± 20
± 30
140
110
150
300
260
27
15
CES
Typ.
2.7
5
3.2
±100
Max.
1.5
Nm/lb.in.
5.0
3.2
35
mA
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Advantages
Applications
C90
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Low Gate Drive Requirement
High Power Density
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
High Blocking Voltage
CES
CE(sat)
1
2
5
≤ ≤ ≤ ≤ ≤ 3.2V
= 3000V
= 15A
5 = Collector
TM
Isolated Tab
DS100125A(11/09)

Related parts for IXBF20N300

IXBF20N300 Summary of contents

Page 1

... 0.8 • CES CE CES GE Note 0V ± 20V GES 20A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXBF20N300 Maximum Ratings 3000 Ω 3000 ± 20 ± 140 Ω ≤ V 0.8 • CES 110 -55 ... +150 150 -55 ... +150 300 260 20 ...

Page 2

... J 540 300 395 0.15 Characteristic Values Min. Typ. 1.35 /dt = 100A/μs 30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBF20N300 ISOPLUS i4-Pak Max 1.13 °C/W °C/W Max. 2.1 V μs A 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... V = 25V GE 20V 1.6 15V 1.4 1.2 10V 1.0 0.8 5V 0.6 2.5 3.0 3.5 4.0 4 25º IXBF20N300 Fig. 2. Extended Output Characteristics @ 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 40A C -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25º ...

Page 4

... IXBF20N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 25º 0.0 0.5 1.0 1 Volts F Fig. 10. Capacitance MHz Volts CE Fig. 12. Maximum Transient Thermal Impedance 0.001 0.01 0.1 Pulse Width - Seconds T = 125º ...

Page 5

... V = 15V GE 500 = 1250V 380 450 340 400 350 300 300 260 250 T = 125ºC, 25ºC J 200 220 IXBF20N300 Fig. 14. Resistive Turn-on Rise Time vs. Collector Current R = 10Ω 15V 1250V 125º 25º Amperes C Fig. 16. Resistive Turn-off Switching Times vs ...

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