IXBF32N300 IXYS, IXBF32N300 Datasheet

IGBT 3000V 40A 160W ISOPLUSI4

IXBF32N300

Manufacturer Part Number
IXBF32N300
Description
IGBT 3000V 40A 160W ISOPLUSI4
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet

Specifications of IXBF32N300

Voltage - Collector Emitter Breakdown (max)
3000V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 32A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Vces, (v)
3000
Ic25, Tc=25°c, (a)
40
Ic90, Tc=90°c, (a)
22
Vce(sat), Typ, Tj=25°c, (v)
3.2
Tf Typ, Tj=25°c, (ns)
630
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.78
Package Style
ISOPLUS I4-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
High Voltage, High Gain
BIMOSFET
Bipolar MOS Transistor
(Electrically Isolated Tab)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
C
C
C
C
J
C
C
C
C
CE
CE
GE
= 25°C to 150°C, R
= 250μA, V
= 250μA, V
= 32A, V
= 25°C to 150°C
= 25°C
= 90°C
= 25°C
= 25°C, 1ms
= 0V, V
= 0.8 • V
= 15V, T
TM
Monolithic
GE
GE
CES,
VJ
= ± 20V
GE
CE
= 15V, Note 1
= 125°C, R
V
= 0V
= V
GE
GE
= 0V
GE
= 1M
G
= 10
Preliminary Technical Information
Ω
Ω
T
T
J
J
= 125°C
= 125°C
IXBF32N300
20..120 / 4.5..27
3000
V
Min.
-55 ... +150
-55 ... +150
2.5
CES
Characteristic Values
I
CM
Maximum Ratings
= 80
2400
3000
3000
3000
± 20
± 30
250
160
150
300
260
40
22
Typ.
5
3.5
2.8
±100
Max.
Nm/lb.in.
5.0
3.2
50
2
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Advantages
Applications:
C90
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
3000V Electrical Isolation
International Standard Package
Low Conduction Losses
Low Gate Drive Requirement
High Power Density
Switched-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
High Blocking Voltage
CES
CE(sat)
1
2
5
≤ ≤ ≤ ≤ ≤ 3.2V
= 3000V
= 22A
5 = Collector
TM
ISOLATED TAB
DS100119(02/09)

Related parts for IXBF32N300

IXBF32N300 Summary of contents

Page 1

... 0.8 • CES CE CES 0V ± 20V GES 32A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXBF32N300 Maximum Ratings 3000 Ω 3000 ± 20 ± 250 Ω ≤ V 2400 CES 160 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 ...

Page 2

... J 515 165 630 0.15 Characteristic Values Min. Typ. 1.5 /dt = 100A/μs 33 ≤ 2%. 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXBF32N300 ISOPLUS i4-Pak Max 0.78 °C/W °C/W Max. 2.1 V μs A 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... T = 25º 3 IXBF32N300 Fig. 2. Extended Output Characteristics @ 25º 25V GE 20V 15V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 64A - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 100 40ºC J 25ºC 125º 100 10,000 1,000 100 80 100 120 140 1.000 0.100 0.010 0.001 2000 2500 3000 IXBF32N300 Fig. 8. Forward Voltage Drop of Intrinsic Diode 25º 0.0 0.5 1.0 1 Volts F Fig. 10. Capacitance MHz ...

Page 5

... V = 15V GE 200 = 1250V 800 190 700 180 170 600 160 500 150 140 400 130 300 120 200 110 IXBF32N300 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 2Ω 15V 1250V Amperes C Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature t ...

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