STGB10NC60KDT4 STMicroelectronics, STGB10NC60KDT4 Datasheet - Page 14

• Manufacturer Part Number: STGB10NC60KDT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5736-2

Package mechanical data
14/20
Table 10.
Figure 23. DPAK package drawing
Dim.
A1
A2
D1
E1
V2
b4
e1
L1
L2
L4
c2
D
H
R
A
E
b
c
e
L
DPAK package mechanical data
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
Doc ID 11423 Rev 6
5.10
4.70
2.28
2.80
0.80
0.20
mm
Typ
STGx10NC60KD
10.10
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o
0068772_G