STGB10NC60KDT4 STMicroelectronics, STGB10NC60KDT4 Datasheet - Page 7

• Manufacturer Part Number: STGB10NC60KDT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5736-2

STGx10NC60KD
Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
Doc ID 11423 Rev 6
I
I
I
di/dt=100 A/µs
(see
I
T
(see
F
F
F
F
j
=5 A
=5 A, T
=5 A, V
=5 A, V
=125 °C, di/dt=100 A/µs
Test conditions
Figure
Figure
j
R
R
=125 °C
=40 V,
=40 V,
5)
5)
Electrical characteristics
Min
-
-
-
Typ.
1.6
1.3
2.2
22
14
35
40
2
Max.
-
-
-
Unit
nC
nC
ns
ns
V
V
A
A
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