STGB10NC60KDT4 STMicroelectronics, STGB10NC60KDT4 Datasheet - Page 9

• Manufacturer Part Number: STGB10NC60KDT4
• Description: IGBT N-CHAN 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGB10NC60KDT4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5736-2

STGx10NC60KD
Figure 8.
Figure 10. Normalized breakdown voltage vs
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
temperature
Doc ID 11423 Rev 6
Figure 9.
Figure 11. Switching losses vs temperature
Collector-emitter on voltage vs
collector current
current
Electrical characteristics
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