IRGIB10B60KD1P International Rectifier, IRGIB10B60KD1P Datasheet - Page 8

• Manufacturer Part Number: IRGIB10B60KD1P
• Description: IGBT W/DIODE 600V 16A TO220FP
• Manufacturer: International Rectifier

Specifications of IRGIB10B60KD1P

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 10A
• Current - Collector (ic) (max): 16A
• Power - Max: 44W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 44W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +175°C
• Rise Time: 34ns
• Termination Type: SMD
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Collector Emitter Saturation Voltage Vce(sat): 2.1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGIB10B60KD1P

IRGIB10B60KD1P
8
1000
100
10
Fig. 22- Typ. Capacitance vs. V
1
V
GE
= 0V; f = 1MHz
V CE (V)
10
200
160
120
80
40
0
Fig. 21 - Typical Diode E
470 Ω
270 Ω
150 Ω
Cres
Cies
Coes
50 Ω
CE
5
T
J
= 150°C
100
10
I F (A)
15
RR
Fig. 23 - Typical Gate Charge vs. V
16
14
12
10
8
6
4
2
0
vs. I
0
20
F
I
CE
Q G , Total Gate Charge (nC)
10
= 10A; L = 2500µH
25
20
300V
30
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400V
40
GE
50