IXSH30N60U1 IXYS, IXSH30N60U1 Datasheet
IXSH30N60U1
Specifications of IXSH30N60U1
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IXSH30N60U1 Summary of contents
Page 1
... V = 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 30 N60U1 IXSH 30 N60AU1 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 100 = 0.8 V CES = 125° 200 -55 ...
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... Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. /dt = 240 A/ 125°C 150 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 30N60U1 IXSH 30N60AU1 TO-247 AD (IXSH) Outline max 150 ...
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... Volts GE Fig.5 Input Admittance 10V 25° 125° Volts GE © 2000 IXYS All rights reserved V = 15V GE 13V 11V 60A 30A 15A 40°C IXSH 30N60U1 IXSH 30N60AU1 Fig.2 Output Characterstics 100 T = 25° Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1.8 ...
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... Q - nanocoulombs g Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 10.0 1000 E (-A) off hi-speed 7.5 750 5.0 500 250 2.5 0 100 10 0.1 0.01 100 125 150 ...
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... 350V R 30 typ 60A 30A 15A 200 di /dt - A/µs F © 2000 IXYS All rights reserved = 25°C 2.0 2.5 120 160 I = 30A F max. 400 600 IXSH 30N60U1 IXSH 30N60AU1 Fig.13 Peak Forward Voltage V Forward Recovery Time 125° 37A F 20 ...
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... Fig.18 Diode Transient Thermal resistance junction to case 1.00 0.10 0.01 0.001 © 2000 IXYS All rights reserved 0.01 0.1 Pulse Width - Seconds IXSH 30N60U1 IXSH 30N60AU1 ...