IXBT10N170 IXYS, IXBT10N170 Datasheet - Page 4

• Manufacturer Part Number: IXBT10N170
• Description: IC TRANS BIPO 20A 1700V TO-268
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBT10N170

• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.8V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 140W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1700
• Ic25, Tc=25°c, (a): 16
• Ic90, Tc=90°c, (a): 10
• Vce(sat), Typ, Tj=25°c, (v): 2.3
• Tf Typ, Tj=25°c, (ns): 1200
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 1.25
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 5
1 4
1 3
1 2
1 0
9
8
7
6
5
4
3
2
0
1 1
1 7
1 5
1 3
9
8
7
1
1 1
9
7
5
0
0
0
Fig. 11. Dependence of E
T
V
V
So lid lines - R
Dashed lines - R
V
V
T
J
G E
C E
G E
C E
2.5
= 1 25
J
= -40
= 1 5V
= 1 360V
1 25
= 1 5V
= 1 360V
Fig. 9. Dependence of E
25
25
Fig. 7. Transconductance
20
º
º
º
º
C
C
C
T
5
C
J
- Degrees Centigrade
50
G
7.5
I
= 1 00 Ohms
R
C
40
G
- Amperes
= 1 0 Ohms
G
- Ohms
1 0
75
off
60
1 2.5
on Temperature
I
I
1 00
off
C
C
= 20A
= 1 0A
on R
1 5
I
I
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
C
C
80
= 20A
= 1 0A
G
1 25
1 7.5
1 00
1 50
20
30
25
20
1 5
1 0
1 5
1 2
1 5
1 4
1 3
1 2
1 0
5
0
1 1
9
6
3
0
9
8
7
0.5
1 0
0
T
V
V
V
I
I
R
C
G
J
G E
C E
C E
= 1 0A
= 1 0mA
= 1 25
Fig. 10. Dependence of E
G
Fig. 8. Forward Voltage Drop of
= 1 5V
= 1 360V
= 600V
= 1 00 Ohms
5
1 2
1
º
C
Fig. 12. Gate Charge
Q
1 0
Intrinsic Diode
G
V
- nanoCoulombs
1 .5
1 4
I
F
C
T
- Volts
- Amperes
J
= 25
1 5
IXBH 10N170
IXBT 10N170
º
C
1 6
2
R
20
off
G
T
= 1 0 Ohms
on I
J
= 1 25
2.5
1 8
C
25
6,534,343
º
C
20
30
3