IXGR60N60B2D1 IXYS, IXGR60N60B2D1 Datasheet
IXGR60N60B2D1
Specifications of IXGR60N60B2D1
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IXGR60N60B2D1 Summary of contents
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... GE(th CES CE CES ±20 V GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGR 60N60B2 IXGR 60N60B2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 150 G CM ≤ 600 V CE 250 -55 ... +150 150 -55 ... +150 2500 5 300 ...
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... A; -di/dt = 200 A/ms thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3 100A C 2.8 50A 25A 2.5 2.2 1.9 1.6 1 Volts G E © 2004 IXYS All rights reserved 350 9V 300 250 7V 200 150 100 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1.0 0.9 0.8 0 ...
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... T = 125ºC J 900 V = 15V 400V 800 CE 700 600 500 400 I = 100A C 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. 200 250 300 c = 25º 100 G 400 350 300 250 200 I = 25A C 150 I = 50A C 100 IXGR 60N60B2 IXGR 60N60B2D1 Fig ...
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... Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts © 2004 IXYS All rights reserved 100A C 50A 25A 85 95 105 115 125 C ies C oes C res Fig . 13. M axim Puls e W idth - millis ec onds IXGR 60N60B2 IXGR 60N60B2D1 Fig. 14. Gate Charge V = 300V CE ...
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... T VJ Fig. 20. Dynamic parameters versus K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 4000 T = 100° 300V nC R 3000 I =120A 60A 30A F 2000 ...