IXGT50N60B IXYS, IXGT50N60B Datasheet - Page 2

• Manufacturer Part Number: IXGT50N60B
• Description: IGBT 600V 75A TO-268
• Manufacturer: IXYS
• Series: HiPerFAST™, Lightspeed 2™r

Specifications of IXGT50N60B

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.3V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-268
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 50
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Tj=25°c, Igbt, (ns): 120
• Eoff, Typ, Tj=125°c, Igbt, (mj): 4.2
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
oes
ies
res
G
GE
GC
thJC
thCK
TO-268 (IXGT) Outline
Test Conditions
I
Pulse test, t 300 s, duty cycle 2 %
TO-247 & TO-268 leaded packages
TO-264 package
C
I
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
Inductive load, T
I
V
Remarks: Switching times may increase
for V
increased R
= I
V
C
C
C
CE
CE
CE
= I
= I
= I
C90
= 0.8 • V
= 0.8 • V
= 25 V, V
C90
C90
CE
C90
CE
; V
, V
, V
, V
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
CE
GE
GE
GE
= 10 V,
= 15 V, V
CES
= 15 V
CES
= 15 V
G
G
GE
Terminals:
1 - Gate
2 -
Collector
, R
, R
= 0 V, f = 1 MHz
J
J
G
G
= 25 C
= 125 C
= R
= R
CE
off
off
= 0.5 V
CES
CES
= 2.7
= 2.7
(T
, higher T
, higher T
J
TO-268 (IXGJ) Leaded Outline
= 25 C, unless otherwise specified)
CES
J
J
or
or
Characteristic Values
min.
4,835,592
4,850,072
25
4100
0.25
0.15
typ. m a x .
160
150
120
200
250
310
3.0
4.2
30
55
50
50
50
50
42
95
3
4,881,106
4,931,844
0.42 K/W
250
250
4.5
IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
5,017,508
5,034,796
K/W
K/W
mJ
nC
nC
nC
mJ
mJ
pF
pF
pF
n s
n s
n s
n s
n s
ns
ns
ns
S
5,049,961
5,063,307
TO-247 AD (IXGH) Outline
TO-264 AA (IXGK) Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
S
1
2
1
2
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
P
Dim.
1
20.80
15.75
19.81
5,187,117
25.91
19.81
20.32
5,237,481
Min.
2
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
4.7
2.2
2.2
1.0
Millimeter
Millimeter
.4
5.46 BSC
3
BSC
26.16
19.96
20.83
21.46
16.26
20.32
Max.
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
5,486,715
5,381,025
Min.
1.020
0.205
0.232
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
.215 BSC
Inches
Inches
Terminals:
1 - Gate
2 -Collector
3 -Emitter
Tab-Collector
BSC
Max.
6,306,728B1
0.225
0.252
Max.
1.030
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072