IXDR30N120 IXYS, IXDR30N120 Datasheet
IXDR30N120
Specifications of IXDR30N120
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IXDR30N120 Summary of contents
Page 1
... CES CE CES 125° ± GES CE(sat IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved IXDR 30N120 IXDR 30N120 D1 Maximum Ratings = 20 kΩ Ω < V CEK , T = 125°C J -55 ... +150 -55 ... +150 ...
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... A/µ 125° -di /dt = 100 A/µ thJC IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 1650 250 110 = 0.5 V 120 CE CES 100 70 500 70 4 ...
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... V Fig. 3 Typ. transfer characteristics 600V 25A 100 120 140 Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions © 2006 IXYS All rights reserved V =17V GE 15V I C 13V 11V 9V 2.5 3 IXDR 30N120 D1 IXDR 30N120 125°C ...
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... Fig.10 Typ. turn off energy and switching times versus gate resistor 10 1 single pulse 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 E off ns 500 t d(off) t 400 = 600V 300 CE = ±15V GE = 47Ω 200 G = 125°C J 100 1500 ns 1200 E off t 900 600 300 Ω 200 240 diode IGBT IXDR30N120 0 ...