IRG4PSH71KD International Rectifier, IRG4PSH71KD Datasheet - Page 2
IRG4PSH71KD
Manufacturer Part Number
IRG4PSH71KD
Description
IGBT W/DIODE 1200V 78A SUPER-247
Manufacturer
International Rectifier
Datasheet
1.IRG4PSH71KD.pdf
(10 pages)
Specifications of IRG4PSH71KD
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 42A
Current - Collector (ic) (max)
78A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4PSH71KD
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PSH71KD
Manufacturer:
IR
Quantity:
505
Company:
Part Number:
IRG4PSH71KD
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRG4PSH71KDPBF
Manufacturer:
International Rectifier
Quantity:
135
Company:
Part Number:
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Manufacturer:
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Quantity:
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IRG4PSH71KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
25
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5770
1400 2100
2.97
3.44
2.60
5.68
3.23
8.90 11.6
13.7
410
145
230
130
370
290
400
100
107
160
680 1020
250
320
1.1
-12
2.5
2.4
38
47
67
84
65
87
13
10
16
—
—
—
—
—
—
±100
500
610
220
350
190
160
240
3.9
6.0
3.7
10
70
15
24
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
mA
µA
nA
mJ
mJ
V
nC
nH
nC
ns
pF
V
V
S
µs
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 42A, T
= 42A, T
= 42A, V
= 42A, V
= 42A
= 78A
= 42A
= 42A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
= 250µA
= 10mA
See Fig.
See Fig.
G
G
G
= 250µA
= 1.5mA
= 42A
J
= 800V
= 800V
= 1200V
= 1200V, T
= 5.0
= 125°C
= 5.0
= 5.0
14
15
17
16
See Fig.8
See Fig. 11,18
See Fig. 7
www.irf.com
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
R
I
J
F
= 150°C
= 200V
= 42A
= 15V