J112 Fairchild Semiconductor, J112 Datasheet - Page 2

• Manufacturer Part Number: J112
• Description: IC SWITCH N-CHAN 35V 50MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of J112

• Current - Drain (idss) @ Vds (vgs=0): 5mA @ 15V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 35V
• Voltage - Cutoff (vgs Off) @ Id: 1V @ 1µA
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Power - Max: 625mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 625 mW
• Gate-source Breakdown Voltage: - 35 V
• Gate-source Cutoff Voltage: - 5 V
• Drain Current (idss At Vgs=0): 1 mA to 5 mA
• Resistance Drain-source Rds (on): 50 Ohms
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 35 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -5V
• Power Dissipation Pd: 350mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Current Rating: 50mA
• Rohs Compliant: Yes
• Transistor Type: JFET
• Zero Gate Voltage Drain Current Idss: 5mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: J112FS

OFF CHARACTERISTICS
ON CHARACTERISTICS
C
C
C
C
SMALL-SIGNAL CHARACTERISTICS
Symbol
V
I
V
I
I
r
DSS
GSS
D(off)
DS(
dg(on)
sg(on)
dg(off)
sg(off)
(BR)GSS
GS(off)
Electrical Characteristics
Typical Characteristics
*
on
Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%
10
8
6
4
2
0
)
0
V
GS
Common Drain-Source
V
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
Source-Gate Off Capacitance
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Drain Cutoff Leakage Current
Zero-Gate Voltage Drain Current*
Drain-Source On Resistance
0.4
= 0 V
DS
- DRAIN-SOURCE VOLTAGE (V)
0.8
Parameter
- 0.2 V
- 0.4 V
- 1.4 V
- 0.6 V
1.2
TYP V
- 0.8 V
T = 25°C
GS(off)
A
1.6
- 1.0 V
= - 2.0 V
TA = 25°C unless otherwise noted
- 1.2 V
2
V
V
V
I
V
V
V
V
V
G
DS
DS
DS
GS
DS
DS
DS
DS
= - 1.0 A, V
= 0, V
= 0, V
= 0, V
= 15 V, I
= - 15 V, V
= 5.0 V, I
= 5.0 V, V
Test Conditions
0.1 V, V
GS
GS
GS
100
50
20
10
= 0, f = 1.0 MHz
= - 10 V, f = 1.0 MHz
= - 10 V, f = 1.0 MHz
_
5
GS
0.5
D
GS
DS
DS
GS
= 1.0 A
= 0
= - 10 V
= 0
= 0
= 0
V
Parameter Interactions
GS (OFF)
_
g
1
fs
- GATE CUTOFF VOLTAGE (V)
I
DSS
111
112
113
111
112
113
r
111
112
113
DS
_
2
I
V
r
V
I
N-Channel Switch
DSS
DS
D
GS
GS(off)
Min
- 3.0
- 1.0
- 0.5
= 1.0 nA
- 35
@ 1.0 mA, V
5.0
2.0
= 0 PULSED
20
, g
@ V
fs
@ V
DS
DS
_
DS
= 15V,
5
GS
Max
= 15V,
- 1.0
- 5.0
- 3.0
= 0
- 10
100
5.0
5.0
1.0
28
30
50
(continued)
_
10
Units
100
50
20
10
5
mA
mA
mA
pF
pF
pF
nA
nA
V
V
V
V