PMBFJ110,215 NXP Semiconductors, PMBFJ110,215 Datasheet - Page 3

• Manufacturer Part Number: PMBFJ110,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ110,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 10mA @ 15V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 4V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 10V (VGS)
• Resistance - Rds(on): 18 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2080-2; 934003900215; PMBFJ110 T/R

Philips Semiconductors
7. Static characteristics
Table 6:
T
8. Dynamic characteristics
Table 7:
T
[1]
9397 750 13401
Product data sheet
Symbol
I
I
I
V
V
R
Symbol
C
C
Switching times (see
t
t
t
t
GSS
DSX
DSS
d
on
s
off
j
j
(BR)GSS
GSoff
DSon
iss
rss
= 25 C.
= 25 C unless otherwise specified.
Test conditions for switching times are as follows:
V
V
V
V
DD
GSoff
GSoff
GSoff
= 1.5 V, V
= 12 V, R
= 7 V, R
= 5 V, R
Parameter
gate-source leakage current
drain-source cut-off current
drain-source leakage current
gate-source breakdown voltage
gate-source cut-off voltage
drain-source on-state resistance
Parameter
input capacitance
feedback capacitance
delay time
turn-on time
storage time
turn-off time
Static characteristics
Dynamic characteristics
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ108
PMBFJ109
PMBFJ110
GS
L
L
L
= 100
= 100
= 0 V to V
= 100
Figure
(PMBFJ109);
(PMBFJ110).
(PMBFJ108);
GSoff
2)
(all types);
PMBFJ108; PMBFJ109; PMBFJ110
Conditions
V
V
V
V
V
I
I
I
I
V
V
V
Conditions
V
V
V
G
D
D
D
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
= 1 A; V
= 1 A; V
= 1 A; V
= 1 A; V
= 15 V; V
= 10 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
= 0 V; V
Rev. 03 — 4 August 2004
DS
DS
DS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
= 5 V
= 5 V
= 5 V
DS
DS
= 15 V
= 15 V
= 15 V
= 0.1 V
= 0.1 V
= 0.1 V
= 10 V; f = 1 MHz
= 0 V; f = 1 MHz; T
= 10 V; f = 1 MHz
= 0 V
= 0 V
= 5 V
amb
= 25 C
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
[1]
[1]
[1]
[1]
Min
-
-
80
40
10
-
-
-
-
Min
-
-
-
-
-
-
-
10
6
4
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Typ
15
50
8
2
4
4
6
Max Unit
3
-
-
-
8
12
18
Max Unit
30
85
15
-
-
-
-
3
25
3
2
0.5 V
nA
nA
mA
mA
mA
V
V
V
pF
pF
pF
ns
ns
ns
ns
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