PMBFJ108,215 NXP Semiconductors, PMBFJ108,215 Datasheet - Page 2

JFET N-CHAN 25V SOT-23

PMBFJ108,215

Manufacturer Part Number
PMBFJ108,215
Description
JFET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ108,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
80mA @ 15V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
10V @ 1µA
Input Capacitance (ciss) @ Vds
30pF @ 10V (VGS)
Resistance - Rds(on)
8 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2078-2
934003880215
PMBFJ108 T/R
Philips Semiconductors
3. Ordering information
4. Marking
5. Limiting values
6. Thermal characteristics
9397 750 13401
Product data sheet
Table 2:
Table 3:
[1]
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 5:
[1]
Type number
PMBFJ108
PMBFJ109
PMBFJ110
Type number
PMBFJ108
PMBFJ109
PMBFJ110
Symbol
V
V
V
I
P
T
T
Symbol Parameter
R
G
stg
j
DS
GSO
GDO
tot
th(j-a)
* = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
Mounted on an FR4 printed-circuit board.
Mounted on an FR4 printed-circuit board.
thermal resistance from junction to ambient
Ordering information
Marking
Limiting values
Thermal characteristics
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
PMBFJ108; PMBFJ109; PMBFJ110
Package
Name
-
Rev. 03 — 4 August 2004
Description
plastic surface mounted package; 3 leads
Marking code
38*
39*
40*
Conditions
T
amb
= 25 C
Conditions
[1]
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
[1]
Min
-
-
-
-
-
-
[1]
65
Typ
500
Max
50
250
+150
150
25
25
25
Unit
K/W
Version
SOT23
Unit
V
V
V
mA
mW
C
C
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