PMBFJ108,215 NXP Semiconductors, PMBFJ108,215 Datasheet - Page 6

JFET N-CHAN 25V SOT-23

PMBFJ108,215

Manufacturer Part Number
PMBFJ108,215
Description
JFET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ108,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
80mA @ 15V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
10V @ 1µA
Input Capacitance (ciss) @ Vds
30pF @ 10V (VGS)
Resistance - Rds(on)
8 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2078-2
934003880215
PMBFJ108 T/R
Philips Semiconductors
10. Revision history
Table 8:
9397 750 13401
Product data sheet
Document ID
PMBFJ108_109_110_
3
Modifications:
PMBFJ108_109_110_
CNV_2
Revision history
Release date Data sheet status
20040804
19971201
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Table 3
“Marking”: Added new marking code.
Product data sheet
Product specification -
PMBFJ108; PMBFJ109; PMBFJ110
Rev. 03 — 4 August 2004
Change notice Order number
-
9397 750 13401 PMBFJ108_109_110_
not applicable
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
N-channel junction FETs
Supersedes
CNV_2
-
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