PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 7

• Manufacturer Part Number: PMBFJ620,115
• Description: JFET N-CHAN DUAL 25V SOT363
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ620,115

• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: 2 N-Channel (Dual)
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Power - Max: 190mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2084-2; 934057915115; PMBFJ620 T/R

Philips Semiconductors
9397 750 13006
Product data sheet
Fig 10. Drain current as a function of gate-source voltage; typical values.
Fig 11. Gate current as a function of drain-gate voltage; typical values.
V
T
j
DS
= 25 C.
= 10 V; T
I
( A)
(pA)
GSS
I
10
10
10
10
D
j
10
10
10
10
10
= 25 C.
10
10
1
1
3
2
1
2
3
4
3
2
1
2.5
0
2.0
4
Rev. 01 — 11 May 2004
1.5
8
1.0
12
Dual N-channel field-effect transistor
I
0.5
D
= 10 mA
100 A
I
V
1 mA
GSS
DG
V
GS
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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