MMBF4393LT1G ON Semiconductor, MMBF4393LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBF4393LT1G
• Description: TRANS JFET SW N-CHAN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBF4393LT1G

• Current - Drain (idss) @ Vds (vgs=0): 5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 500mV @ 10nA
• Input Capacitance (ciss) @ Vds: 14pF @ 15V
• Resistance - Rds(on): 100 Ohm
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Drain Current (idss At Vgs=0): 5 mA to 30 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 30 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Input: 14 pF
• Capacitance, Reverse Recovery: 3.5 pF
• Channel Type: N-Channel
• Current, Gate: 50 mA
• Current, Gate Reverse: 1 nA
• On Resistance: 100 Ohms
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Power Dissipation: 225 mW
• Resistance, Drain To Source On: 100 Ohms
• Resistance, On: 100 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –65 °C
• Transistor Type: N-Channel
• Voltage, Breakdown, Gate To Source: 30 V
• Voltage, Drain To Gate: 30 V
• Voltage, Drain To Source: 30 V
• Voltage, Gate To Source, Breakdown: 30 V
• Voltage, Gate To Source, Cut-off: –3 V
• Voltage, Gate To Source, Forward: 0.4 V
• Breakdown Voltage Vbr: -30V
• Zero Gate Voltage Drain Current Idss: 5mA To 30mA
• Gate-source Cutoff Voltage Vgs(off) Max: -3V
• Power Dissipation Pd: 225mW
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBF4393LT1GOS; MMBF4393LT1GOS; MMBF4393LT1GOSTR

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate−Source Cutoff Voltage
Off−State Drain Current
Zero−Gate−Voltage Drain Current
Drain−Source On−Voltage
Static Drain−Source On−Resistance
Input Capacitance
Reverse Transfer Capacitance
MMBF4391LT1G
MMBF4392LT1G
MMBF4393LT1G
(I
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(V
(V
G
D
D
D
D
GS
GS
DS
DS
DS
DS
DS
DS
= 1.0 mAdc, V
= 12 mAdc, V
= 6.0 mAdc, V
= 3.0 mAdc, V
= 1.0 mAdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, I
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 0 Vdc, V
= 0 Vdc, V
Device
GS
GS
D
DS
GS
GS
GS
GS
DS
DS
GS
GS
GS
= 10 nAdc)
= −15 Vdc, f = 1.0 MHz)
= −12 Vdc, f = 1.0 MHz)
= 0)
= 0)
= 0, T
= 0, T
= −12 Vdc)
= −12 Vdc, T
= 0)
= 0)
= 0)
= 0)
A
A
= 25°C)
= 100°C)
Characteristic
A
= 100°C)
(T
A
= 25°C unless otherwise noted)
Marking
M6G
6K
6J
http://onsemi.com
MMBF4392LT1
MMBF4393LT1
MMBF4392LT1
MMBF4393LT1
MMBF4392LT1
MMBF4393LT1
MMBF4391LT1
MMBF4391LT1
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
MMBF4391LT1
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
V
Symbol
V
V
r
(BR)GSS
I
DS(on)
I
I
GS(off)
DS(on)
C
D(off)
C
GSS
DSS
rss
iss
−4.0
−2.0
−0.5
Min
5.0
30
50
25
−
−
−
−
−
−
−
−
−
−
−
−
3000 / Tape & Reel
Shipping
Max
0.20
−5.0
−3.0
−10
150
100
1.0
1.0
1.0
0.4
0.4
0.4
3.5
75
30
30
60
14
−
†
mAdc
nAdc
mAdc
nAdc
mAdc
Unit
Vdc
Vdc
Vdc
pF
pF
W