MMBF4393LT1G ON Semiconductor, MMBF4393LT1G Datasheet - Page 5

• Manufacturer Part Number: MMBF4393LT1G
• Description: TRANS JFET SW N-CHAN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBF4393LT1G

• Current - Drain (idss) @ Vds (vgs=0): 5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 500mV @ 10nA
• Input Capacitance (ciss) @ Vds: 14pF @ 15V
• Resistance - Rds(on): 100 Ohm
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Drain Current (idss At Vgs=0): 5 mA to 30 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 30 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Input: 14 pF
• Capacitance, Reverse Recovery: 3.5 pF
• Channel Type: N-Channel
• Current, Gate: 50 mA
• Current, Gate Reverse: 1 nA
• On Resistance: 100 Ohms
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Power Dissipation: 225 mW
• Resistance, Drain To Source On: 100 Ohms
• Resistance, On: 100 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –65 °C
• Transistor Type: N-Channel
• Voltage, Breakdown, Gate To Source: 30 V
• Voltage, Drain To Gate: 30 V
• Voltage, Drain To Source: 30 V
• Voltage, Gate To Source, Breakdown: 30 V
• Voltage, Gate To Source, Cut-off: –3 V
• Voltage, Gate To Source, Forward: 0.4 V
• Breakdown Voltage Vbr: -30V
• Zero Gate Voltage Drain Current Idss: 5mA To 30mA
• Gate-source Cutoff Voltage Vgs(off) Max: -3V
• Power Dissipation Pd: 225mW
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBF4393LT1GOS; MMBF4393LT1GOS; MMBF4393LT1GOSTR

100
90
40
80
70
60
50
30
20
10
0
10
Figure 10. Effect of I
Resistance and Gate−Source Voltage
20
I
DSS
30 40 50 60 70
, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
T
channel
r
DS(on)
= 25°C
@ V
GS
= 0
DSS
80 90 100 110 120 130 140 150
on Drain−Source
V
GS(off)
http://onsemi.com
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
5
The Zero−Gate−Voltage Drain Current (I
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (V
(r
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
MMBF4392 has an I
10 shows r
I
and 4.8 V.
DSS
DS(on)
For example:
The electrical characteristics table indicates that an
= 75 mA. The corresponding V
Unknown
) to I
r
DS(on)
DS(on)
GS(off)
DSS
. Most of the devices will be within
and V
= 52 W for I
) and Drain−Source On Resistance
NOTE 2
DSS
GS
range of 25 to 75 mA. Figure
range for an MMBF4392
DSS
= 25 mA and 30 W for
GS
values are 2.2 V
DSS
) is the