FDC6305N Fairchild Semiconductor, FDC6305N Datasheet
FDC6305N
Manufacturer Part Number
FDC6305N
Description
MOSFET N-CHAN DUAL 20V SSOT6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC6305N.pdf
(5 pages)
Specifications of FDC6305N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 2.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
310pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
2.7A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6305NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC6305N
Manufacturer:
Fairchild Semiconductor
Quantity:
778 815
Part Number:
FDC6305N
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDC6305N-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
1999 Fairchild Semiconductor Corporation
FDC6305N
Dual N-Channel 2.5V Specified PowerTrench
General Description
These N-Channel low threshold 2.5V specified
MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been
especially tailored to minimize on-state resistance and
yet maintain low gate charge for superior switching
performance.
Applications
•
•
•
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Outlines and Ordering Information
Symbol
D
Load switch
DC/DC converter
Motor driving
J
DSS
GSS
D
, T
JA
JC
Device Marking
stg
SuperSOT
.305
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D1
S1
TM
-6
D2
G1
- Continuous
- Pulsed
S2
FDC6305N
Parameter
Device
G2
T
A
= 25°C unless otherwise noted
Reel Size
Features
•
•
•
•
•
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
2.7 A, 20 V. R
Low gate charge (3.5nC typical).
Fast switching speed.
SuperSOT
High performance trench technology for extremely
low R
than standard SO-8); low profile (1mm thick).
TM
DS(ON)
MOSFET
6
5
4
.
TM
-6 package: small footprint (72% smaller
R
DS(ON)
DS(ON)
Tape Width
-55 to +150
= 0.08
Ratings
= 0.12
8mm
0.96
130
2.7
0.9
0.7
20
60
8
8
2
1
@ V
3
@ V
GS
GS
= 4.5 V
= 2.5 V
March 1999
Quantity
3000 units
Units
FDC6305N, Rev. C
C/W
C/W
W
V
V
A
C
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Datasheet:
FDC6305N Summary of contents
Page 1
... Device Reel Size FDC6305N 7’’ March 1999 = 0. 4.5 V DS(ON 0. 2.5 V DS(ON package: small footprint (72% smaller Ratings Units 20 8 2.7 8 0.96 0.9 0.7 -55 to +150 130 C/W 60 C/W Tape Width Quantity 8mm 3000 units FDC6305N, Rev ...
Page 2
... C/W when 2 mounted on a 0.005 in pad of 2 oz. copper. Min Typ Max Units mV 100 nA -100 nA 0.4 0.9 1.5 V -2.7 mV/ C 0.060 0.080 0.095 0.128 0.085 0.120 310 8 3 0.55 nC 0.95 nC 0.8 A 0.77 1.2 V (Note 2) c) 180 C minimum mounting pad. FDC6305N, Rev. C ...
Page 3
... C 1 0.1 0.01 0.001 0.0001 Figure 6. Body Diode Forward Voltage Variation with Source Current V = 2.5V GS 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDC6305N, Rev 1.4 ...
Page 4
... Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 180 C 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation. R ( 180°C/W JA P(pk ( Duty Cycle 100 300 FDC6305N, Rev ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS TM FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...