FDS4897C Fairchild Semiconductor, FDS4897C Datasheet

MOSFET N/P-CH 40V 8-SOIC

FDS4897C

Manufacturer Part Number
FDS4897C
Description
MOSFET N/P-CH 40V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS4897C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
6.2A, 4.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
760pF @ 20V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.029 Ohm @ 10 V @ N Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.2 A @ N Channel or 4.4 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4897CTR

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Manufacturer
Quantity
Price
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FDS4897C
Dual N & P-Channel PowerTrench
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
Application
©2005 Fairchild Semiconductor Corporation
FDS4897C Rev C(W)
Thermal Characteristics
Package Marking and Ordering Information
Absolute Maximum Ratings
V
V
I
P
T
R
R
Symbol
D
J
DSS
GSS
D
θJA
θJC
, T
Inverter
Power Supplies
Device Marking
STG
FDS4897C
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
advanced
SO-8
D
- Continuous
- Pulsed
D2
FDS4897C
D
Device
D2
Parameter
S1
S
G1
PowerTrench
S
S2
S
T
G2
A
G
= 25°C unless otherwise noted
®
Reel Size
MOSFET
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
High power handling capability in a widely used
RoHS compliant
Q1:
6.2A, 40V
Q2:
–4.4A, –40V R
surface mount package
N-Channel
P-Channel
5
6
7
8
Q1
±20
6.2
40
20
Tape width
12mm
R
R
R
–55 to +150
Q2
Q1
DS(on)
DS(on)
DS(on)
DS(on)
1.6
0.9
78
40
2
1
= 29mΩ @ V
= 36mΩ @ V
= 46mΩ @ V
= 63mΩ @ V
November 2005
–4.4
Q2
±20
–20
40
4
3
2
1
GS
GS
GS
GS
www.fairchildsemi.com
2500 units
= 10V
= 4.5V
= –10V
= –4.5V
Quantity
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for FDS4897C

FDS4897C Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device FDS4897C FDS4897C ©2005 Fairchild Semiconductor Corporation FDS4897C Rev C(W) ® MOSFET Features • Q1: 6.2A, 40V PowerTrench • Q2: –4.4A, –40V R • High power handling capability in a widely used surface mount package • ...

Page 2

... GS(th) ΔT Temperature Coefficient J R Static Drain-Source DS(on) On-Resistance g Forward Transconductance FS Dynamic Characteristics C Input Capacitance iss C Output Capacitance oss C Reverse Transfer rss Capacitance R Gate Resistance G FDS4897C Rev C( 25°C unless otherwise noted A Test Conditions (Note 7 – =–8 250 μ –250 μA V ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device. FDS4897C Rev C(W) (continued 25°C unless otherwise noted A Test Conditions (Note 2) ...

Page 4

... JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature 10V 125 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS4897C Rev C(W) 3 2.6 2.2 1.8 3.5V 1.4 3.0V 1 0 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 0.06 0.05 0.04 0. ...

Page 5

... 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.001 0.01 0 TIME (sec) 1 Figure 11. Single Pulse Maximum Peak Current. FDS4897C Rev C(W) 1000 800 30V 20V 600 400 200 C rss Figure 8. Capacitance Characteristics. 50 100 μ 1ms 10ms 100 0.001 0.01 Figure 10 ...

Page 6

... JUNCTION TEMPERATURE ( J Figure 15. On-Resistance Variation with Temperature -10V 1 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics. FDS4897C Rev C(W) 2.6 2.4 -4.0V 2 1.8 -3.5V 1.6 1.4 -3.0V 1.2 1 0.8 3 3.5 4 4.5 0 Figure 14. On-Resistance Variation with Drain Current and Gate Voltage. ...

Page 7

... C/W θ 0.01 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 21. Maximum Safe Operating Area 0.001 0.01 0 TIME (sec) 1 Figure 23. Single Pulse Maximum Peak Current FDS4897C Rev C(W) 1400 -20V 1200 1000 800 600 400 200 C RSS Figure 20. Capacitance Characteristics. 50 100 μ 40 1ms 10ms 100 ...

Page 8

... SINGLE PULSE 0.001 0.0001 0.001 Figure 25. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4897C Rev C(W) 0.01 0 TIME (sec ( θJA θJA ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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