FDMA1024NZ Fairchild Semiconductor, FDMA1024NZ Datasheet

MOSFET N-CH DUAL 20V 6-MICROFET

FDMA1024NZ

Manufacturer Part Number
FDMA1024NZ
Description
MOSFET N-CH DUAL 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1024NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.3nC @ 4.5V
Input Capacitance (ciss) @ Vds
500pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.054 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1024NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1024NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
86 327
Part Number:
FDMA1024NZ
Manufacturer:
HONGFA
Quantity:
6 700
Part Number:
FDMA1024NZ
0
©2010 Fairchild Semiconductor Corporation
FDMA1024NZ Rev.B4
FDMA1024NZ
Dual N-Channel PowerTrench
20 V, 5.0 A, 54 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
R
R
D
DS
GS
D
J
Max r
Max r
Max r
Max r
HBM ESD protection level = 1.6 kV (Note 3)
Low profile - 0.8 mm maximum - in the
MicroFET 2x2 mm
RoHS Compliant
θJA
θJA
θJA
θJA
Free from halogenated compounds and ant imony
oxides
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
024
= 54 mΩ at V
= 66 mΩ at V
= 82 mΩ at V
= 114 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
GS
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
FDMA1024NZ
MicroFET 2x2
= 1.5 V, I
-Pulsed
Device
D
D
D
D
PIN 1
= 5.0 A
= 4.2 A
= 2.3 A
= 2.0 A
T
new package
A
= 25 °C unless otherwise noted
D1
S1
Parameter
D1
G2
®
MicroFET 2X2
G1
Package
MOSFET
S2
D2
D2
1
General Description
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mo de
applications.
Applications
Baseband Switch
Loadswitch
DC-DC Conversion
Reel Size
7 ”
D2
G1
S1
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(N ote 1b)
(N ote 1d)
1
2
3
173 (Single Operation)
Tape Width
86 (Single Operation)
features two independent
151 (Dual Operation)
69 (Dual Operation)
8 mm
–55 to +150
Ratings
0.7
5.0
6.0
1.4
20
±8
6
5
4
www.fairchildsemi.com
3000 units
Quantity
May 2010
D1
G2
S2
Units
°C/W
°C
W
V
V
A

Related parts for FDMA1024NZ

FDMA1024NZ Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 024 FDMA1024NZ ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev.B4 ® MOSFET General Description = 5.0 A This device is designed specifically as a single package solution D for dual switching requirements in cellular handset and other = 4 ...

Page 2

... Drain-Source Diode Characteristics I Maximum Continuous Source-Drain Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev. °C unless otherwise noted J Test Conditions I = 250 µ 250 µA, referenced to 25 ° ...

Page 3

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2 The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev.B4 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R pad copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. ...

Page 4

... DUTY CYCLE = 0.5% MAX 125 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev. °C unless otherwise noted 2.5 2.0 1.5 1.0 s µ 0.5 0.6 0.8 1.0 Figure 2. 200 160 120 100 125 150 ...

Page 5

... Gate Charge Characteristics - 125 - GATE TO SOURCE VOLTAGE ( Figure 9. Gate Leakage Current vs Gate to Source Voltage 100 0 Figure 11. ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev. °C unless otherwise noted J 1000 0. 4 PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation 5 100 MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 8 . ...

Page 6

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE R JA θ 0. Figure 12. Junction to Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev. °C unless otherwise noted 173 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 7

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev.B4 7 www.fairchildsemi.com ...

Page 8

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMA1024NZ Rev.B4 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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