FDMA1029PZ Fairchild Semiconductor, FDMA1029PZ Datasheet - Page 2

• Manufacturer Part Number: FDMA1029PZ
• Description: IC MOSFET P-CH DUAL MICROFET 2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1029PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1029PZTR

Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
S
rr
Electrical Characteristics
Symbol
Off Characteristics
BV
'BV
I
I
On Characteristics
V
'V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSS
SD
d(on)
r
d(off)
f
rr
FS
GS(th)
'T
'T
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
DSS
J
J
Maximum Continuous Source–Drain Diode Forward Current
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Source–Drain Diode Forward
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
V
I
dI
F
GS
F
V
I
V
V
V
I
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
= –3.1 A,
T
D
D
/dt = 100 A/µs
A
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 0 V, I
= –250 PA, Referenced to 25qC
= –250 PA, Referenced to 25qC
= 25°C unless otherwise noted
= –4.5 V, I
= –16 V,
= V
= –10 V,
= 0 V,
= ± 12 V, V
= –4.5 V, I
= –2.5 V, I
= –10 V,
= –10 V,
= –4.5 V, R
= –10 V,
= –4.5 V
Test Conditions
GS
,
S
= –1.1 A
D
I
V
I
= –3.1 A, T
I
V
I
I
D
D
D
D
D
D
D
GS
DS
GEN
GS
= –250 PA
= –250 PA
= –3.1 A
= –2.5 A
= –3.1 A
= –1 A,
= –3.1 A,
= 0 V
= 0 V
= 0 V,
= 6 :
(Note 2)
J
=125qC
Min Typ Max Units
–0.6
–20
–0.8
25
9
–1.0
–12
–11
540
120
100
7.0
1.1
2.4
60
88
87
13
11
37
36
4
FDMA1029PZ Rev.B4(W)
–1.2
-1.1
–1.5
±10
141
140
–1
95
24
20
59
58
10
mV/qC
mV/qC
nC
A
ns
m:
V
nC
nC
nC
PA
PA
pF
pF
pF
ns
ns
ns
ns
V
V
S