FDMA1029PZ Fairchild Semiconductor, FDMA1029PZ Datasheet - Page 4

• Manufacturer Part Number: FDMA1029PZ
• Description: IC MOSFET P-CH DUAL MICROFET 2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1029PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1029PZTR

Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
0
1
Figure 3. On-Resistance Variation with
V
4 5V
-50
Figure 1. On-Region Characteristics.
GS
3.5V
V
Figure 5. Transfer Characteristics.
DS
=
V
I
= -5V
GS
D
= -3.1A
-25
= -4.5V
0.4
0.5
-V
-V
3.0V
GS
DS
T
0
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
2.5V
0.8
25
T
1
A
= 125
50
o
C
1.2
1.5
75
25
2.0V
o
C
-55
100
o
o
C)
C
1.6
2
125
1.5V
150
2.5
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.16
0.12
0.08
0.04
0.01
0.2
100
2.6
2.2
1.8
1.4
0.6
0.1
Figure 4. On-Resistance Variation with
10
Figure 2. On-Resistance Variation with
with Source Current and Temperature.
1
1
0
0
0
Drain Current and Gate Voltage.
V
T
T
A
GS
A
= 25
V
= 125
= 0V
0.2
GS
Gate-to-Source Voltage.
o
= -2.0V
-V
C
1
o
2
C
-2.5V
SD
-V
, BODY DIODE FORWARD VOLTAGE (V)
GS
0.4
, GATE TO SOURCE VOLTAGE (V)
25
o
-I
C
2
D
T
0.6
-3.0V
, DRAIN CURRENT (A)
A
4
= 125
-55
o
0.8
C
o
3
C
-3.5V
6
1
FDMA1029PZ Rev.B4(W)
4
-4.0V
1.2
8
I
D
5
1.4
= -1.55A
-4.5V
1.6
10
6