FDMA1029PZ Fairchild Semiconductor, FDMA1029PZ Datasheet - Page 5

• Manufacturer Part Number: FDMA1029PZ
• Description: IC MOSFET P-CH DUAL MICROFET 2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1029PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1029PZTR

Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0.01
0
0.1
R
0.0001
SINGLE PULSE
R
1
DS(ON)
TJA
V
I
D
T
GS
A
= -3.1A
= 173
= 25
= -4.5V
LIMIT
2
D = 0.5
o
o
C
0.2
C/W
0.1
0.05
-V
0.02
DS
0.01
4
, DRAIN-SOURCE VOLTAGE (V)
Q
1
0.001
SINGLE PULSE
g
DC
, GATE CHARGE (nC)
10s
6
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
1s
DS
100ms
= -5V
Figure 11. Transient Thermal Response Curve.
8
10ms
-10V
0.01
1ms
10
10
100us
-15V
12
0.1
100
14
t
1
, TIME (sec)
1000
800
600
400
200
50
40
30
20
10
0.0001
0
Figure 10. Single Pulse Maximum Power
0
1
Figure 8. Capacitance Characteristics.
0
C
0.001
rss
4
-V
C
DS
0.01
oss
10
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
P(pk)
0.1
8
Duty Cycle, D = t
T
R
R
J
TJA
- T
TJA
C
(t) = r(t) * R
iss
A
t
=173 °C/W
1
= P * R
t
1
100
2
12
FDMA1029PZ Rev.B4(W)
TJA
TJA
1
10
(t)
/ t
2
SINGLE PULSE
R
TJA
T
16
A
= 173°C/W
100
= 25°C
V
1000
f = 1MHz
GS
= 0 V
1000
20