SI4904DY-T1-E3 Vishay, SI4904DY-T1-E3 Datasheet - Page 3
![MOSFET N-CH DUAL 40V 8A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4904DY-T1-E3
Manufacturer Part Number
SI4904DY-T1-E3
Description
MOSFET N-CH DUAL 40V 8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4904DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4904DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 951
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
0.020
0.018
0.016
0.014
0.012
0.010
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
GS
0.6
12
4
V
= 4.5 V
V
DS
DS
Output Characteristics
Q
g
= 20 V
– Drain-to-Source Voltage (V)
V
I
D
– Total Gate Charge (nC)
DS
V
GS
Gate Charge
– Drain Current (A)
= 10 V
1.2
24
8
= 10 V
V
DS
= 30 V
1.8
12
36
V
GS
= 10 thru 3 V
2 V
2.4
16
48
3.0
20
60
3500
2800
2100
1400
700
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
rss
I
- 25
D
= 5 A
0.6
V
V
8
DS
GS
Transfer Characteristics
T
0
J
T
– Junction Temperature (°C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
C
= 125 °C
oss
Capacitance
25
25 °C
1.2
16
Vishay Siliconix
C
50
iss
1.8
24
75
Si4904DY
www.vishay.com
- 55 °C
V
100
GS
V
GS
2.4
32
= 10 V
= 4.5 V
125
150
3.0
40
3