SI4904DY-T1-E3 Vishay, SI4904DY-T1-E3 Datasheet - Page 2
![MOSFET N-CH DUAL 40V 8A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4904DY-T1-E3
Manufacturer Part Number
SI4904DY-T1-E3
Description
MOSFET N-CH DUAL 40V 8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4904DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
85nC @ 10V
Input Capacitance (ciss) @ Vds
2390pF @ 20V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2V
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.016 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
8 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4904DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 951
Part Number:
SI4904DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4904DY
Vishay Siliconix
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
V
V
Pulse Diode Forward Current
Body Diode Voltage
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
a
b
b
a
J
= 25 °C, unless otherwise noted
b
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
I
I
C
t
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(off)
GSS
I
DSS
d(on)
Q
DS
g
Q
R
I
SM
t
t
t
t
t
DS
oss
t
t
SD
iss
rss
S
rr
gd
a
b
fs
gs
r
f
r
f
g
g
rr
/T
/T
J
J
I
F
V
V
V
V
I
I
= 2 A, dI/dt = 100 A/µs, T
DS
D
D
DS
DS
DS
≅ 5 A, V
≅ 5 A, V
= 20 V, V
= 40 V, V
V
= 20 V, V
V
= 20 V, V
V
V
V
DS
V
V
V
V
V
DS
GS
DS
DS
DD
GS
DD
Test Conditions
GS
DS
= 0 V, V
= V
= 0 V, I
= 40 V, V
= 5 V, V
I
I
= 20 V, R
= 4.5 V, I
D
GEN
= 20 V, R
GEN
= 10 V, I
= 15 V, I
N-Channel
N-Channel
N-Channel
N-Channel
T
N-Channel
D
f = 1 MHz
I
S
C
= 250 µA
= 250 µA
GS
GS
GS
GS
GS
= 1.5 A
= 25 °C
= 4.5 V, R
= 4.5 V, R
, I
= 0 V, I
= 0 V, T
D
GS
= 4.5 V, I
= 10 V, I
D
GS
= 250 µA
= 250 µA
GS
D
D
D
L
= ± 16 V
L
= 10 V
= 5 A
= 5 A
= 4 A
= 4 Ω
=4 Ω
= 0 V
D
J
= 1 MHz
g
g
D
= 55 °C
D
J
= 1 Ω
= 1 Ω
= 5 A
= 25 °C
= 5 A
Min.
0.8
40
20
0.013
0.015
2390
- 4.8
Typ.
0.69
270
165
117
5.5
9.7
2.6
40
23
56
26
15
20
56
10
88
62
19
62
62
26
36
S09-0540-Rev. C, 06-Apr-09
Document Number: 73793
0.016
0.019
Max.
100
135
180
2.0
4.0
2.7
1.2
10
85
40
23
30
85
15
95
30
20
95
95
1
mV/°C
Unit
nC
nC
nA
µA
pF
nS
ns
ns
Ω
V
V
A
S
A
V