SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 14
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08