SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 4
![MOSFET N-CH DUAL 30V 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4618DY-T1-E3
Manufacturer Part Number
SI4618DY-T1-E3
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI4618DY-T1-E3
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
17 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.7A, 11.4A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1535pF @ 15V
Power - Max
1.38W, 2.35W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7.4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
2.5V
Configuration
Dual
Resistance Drain-source Rds (on)
0.017 Ohms, 0.01 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
6.7 A, 11.4 A
Power Dissipation
1.38 W, 2.35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4618DY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4618DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 500
Si4618DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.025
0.022
0.016
0.013
0.010
0.019
10
50
40
30
20
10
8
6
4
2
0
0
0.0
0
0
I
D
= 8 A
On-Resistance vs. Drain Current
0.6
10
6
V
DS
Output Characteristics
Q
V
DS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
V
I
= 10 V
GS
D
Gate Charge
V
1.2
- Drain Current (A)
12
20
GS
= 4.5 V
= 10 V thru 4 V
V
DS
1.8
18
30
= 30 V
V
GS
V
DS
2.4
24
40
= 10 V
3 V
= 20 V
3.0
30
50
2000
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
I
D
- 25
= 8 A
T
C
T
6
1
V
C
= 125 °C
V
DS
Transfer Characteristics
T
= 25 °C
GS
0
J
C
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
iss
25
Capacitance
12
2
S09-2109-Rev. B, 12-Oct-09
50
Document Number: 74450
T
18
C
3
75
= - 55 °C
V
100
GS
24
V
4
= 10 V
GS
125
= 4.5 V
150
30
5