SI4618DY-T1-E3 Vishay, SI4618DY-T1-E3 Datasheet - Page 9

• Manufacturer Part Number: SI4618DY-T1-E3
• Description: MOSFET N-CH DUAL 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4618DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 17 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.7A, 11.4A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1535pF @ 15V
• Power - Max: 1.38W, 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.017 Ohms, 0.01 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 6.7 A, 11.4 A
• Power Dissipation: 1.38 W, 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4618DY-T1-E3TR

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
0.001
0.01
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-6
-1
-5
1
0.00
0
Source-Drain Diode Forward Voltage
20 V
0.2
25
Reverse Current (Schottky)
V
V
SD
SD
- Source-to-Drain Voltage (V)
- Source-to-Drain Voltage (V)
25 °C
150 °C
0.4
50
0.6
75
30 V
Limited by R
0.01
10 V
100
0.1
10
1
0
0.8
100
1 .
* V
Safe Operating Area, Junction-to-Ambient
GS
DS(on)
1.0
125
*
V
minimum V
DS
- Drain-to-Source Voltage (V)
1.2
150
Single Pulse
1
T
A
= 25 °C
GS
at which R
10
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
is specified
80
40
0
0
0 .
0
1 ms
10 ms
100 ms
10 s
1 s
DC
0
I
1
D
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
= 8 A
1
1
0
0
2
V
0.01
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
125 °C
5
Vishay Siliconix
25 °C
6
Si4618DY
7
www.vishay.com
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8
9
1
10
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