IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7501TRPBF
• Description: MOSFET N-CH DUAL 20V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7501TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.2 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7501TRPBF; IRF7501TRPBFTR; Q2235500; Q3145294

Electrical Characteristics @ T
IRF7501PbF
Source-Drain Ratings and Characteristics

‚
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
f
I
r
S
SM
DSS
rr
fs
GSS
(BR)DSS
GS(th)
iss
oss
rss
SD
g
gs
gd
DS(on)
rr
Repetitive rating; pulse width limited by
2
(BR)DSS
I
max. junction temperature. ( See fig. 10 )
T
SD
J
≤ 150°C
≤ 1.7A, di/dt ≤ 66A/µs, V
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
0.70 –––
Min. Typ. Max. Units
–––
––– 0.041 –––
––– 0.085 0.135
––– 0.120 0.20
–––
–––
–––
–––
–––
––– 0.84
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.6
20
ƒ
„
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤10sec
–––
–––
–––
–––
–––
––– -100
260
130
–––
–––
5.3
2.2
5.7
–––
61
24
15
16
37
39
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
1.0
8.0
1.3
3.3
19
1.2
25
1.25
59
56
V/°C
µA
nA
nC
ns
pF
nC
ns
V
V
S
A
Ω
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 8
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 1.7A
= 1.7A
= 25°C, I
= 25°C, I
= 6.0Ω
= 5.7Ω „
= V
= 10V, I
= 16V, V
= 16V, V
= 12V
= -12V
= 16V
= 0V
= 15V
= 0V, I
= 4.5V, I
= 2.7V, I
= 4.5V, See Fig. 9 „
= 10V
GS
Conditions
, I
D
S
F
D
D
= 250µA
D
D
GS
GS
Conditions
= 1.7A, V
= 1.7A
= 250µA
= 0.85A
= 1.7A „
= 0.85A „
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V ƒ
G
S
D