IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7501TRPBF
• Description: MOSFET N-CH DUAL 20V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7501TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.2 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7501TRPBF; IRF7501TRPBFTR; Q2235500; Q3145294

IRF7501PbF
4
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
I
D
= 1.7A
Fig 5. Normalized On-Resistance
T , Junction Temperature (°C)
J
0
Vs. Temperature
20
40
0.13
0.11
0.09
0.07
0.05
60
2
Fig 7. Typical On-Resistance Vs. Gate
80 100 120 140 160
V
V
GS
3
GS
= 4.5V
, Gate-to-Source Voltage (V)
4
I
D
A
= 2.4A
5
Fig 6. Typical On-Resistance Vs. Drain
6
0.8
0.6
0.4
0.2
0.0
0
V
GS
7
= 5.0V
8
I , Drain Current (A)
D
A
Current
2
V
GS
= 2.5V
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4
6
A