IRF7501TRPBF International Rectifier, IRF7501TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7501TRPBF
• Description: MOSFET N-CH DUAL 20V 2.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7501TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 260pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 135 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 2.4 A
• Power Dissipation: 1.2 W
• Gate Charge Qg: 5.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7501TRPBF; IRF7501TRPBFTR; Q2235500; Q3145294

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500
400
300
200
100
1000
100
0.1
0
10
0.00001
1
Fig 8. Typical Capacitance Vs.
1
D = 0.50
Drain-to-Source Voltage
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
C
C
0.20
0.10
0.05
0.02
0.01
V
iss
oss
rss
DS
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
(THERMAL RESPONSE)
0.0001
= 0V,
= C
= C
= C
SINGLE PULSE
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
, C
0.001
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
100
0.01
A
10
8
6
4
2
0
0.1
0
I
V
D
DS
= 1.7A
= 16V
Fig 9. Typical Gate Charge Vs.
1. Duty factor D = t / t
2. Peak T = P
Notes:
Q , Total Gate Charge (nC)
2
G
Gate-to-Source Voltage
1
J
4
DM
x Z
1
IRF7501PbF
thJA
P
2
FOR TEST CIRCUIT
6
DM
SEE FIGURE 9
+ T
10
A
t
1
t
2
8
5
100
10
A