IRF7314TRPBF International Rectifier, IRF7314TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7314TRPBF
• Description: MOSFET 2P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7314TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 98 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Continuous Drain Current Id: -5.3A
• Power Dissipation Pd: 2W
• No. Of Pins: 8
• Drain Source On Resistance @ 2.7v: 98mohm
• Drain Source On Resistance @ 4.5v: 58mohm
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7314PBFTR

0.08
0.07
0.06
0.05
0.04
0.03
2.0
1.5
1.0
0.5
0.0
-60
0.0
I
D
-40
= -2.9A
V
T , Junction Temperature (°C)
GS
-20
J
2.0
, Gate-to-Source Voltage (V)
0
20
40
4.0
60
I
D
80
= -5.3A
100 120 140 160
V
6.0
GS
= -4.5V
8.0
A
A
400
300
200
100
0.8
0.6
0.4
0.2
0.0
0
25
0
Starting T , Junction Temperature ( C)
50
4
J
-I , Drain Current (A)
D
75
8
V
GS
100
12
= -2.7V
TOP
BOTTOM
V
GS
125
16
= -4.5V
-1.3A
-2.3A
-2.9A
°
I D
150
20
A