IRF7304TRPBF International Rectifier, IRF7304TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7304TRPBF
• Description: MOSFET 2P-CH 20V 4.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7304TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 610pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Resistance Drain-source Rds (on): 140 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.3 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7304PBFTR

1500
1000
100
500
0.1
10
1
0
0.3
1
-V
-V
SD
DS
C
C
C
0.6
iss
oss
V
C
C
C
rss
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
T = 150°C
GS
iss
rss
oss
J
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
0.9
10
gd
gd
f = 1MHz
T = 25°C
, C
J
ds
1.2
SHORTED
V
GS
= 0V
100
1.5
A
A
100
10
10
8
6
4
2
0
1
0
1
I
V
D
T
T
Single Pulse
DS
A
J
= -2.2A
= 25 C
= 150 C
= -16V
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
5
°
°
G
, Drain-to-Source Voltage (V)
10
BY R
10
DS(on)
FOR TEST CIRCUIT
15
SEE FIGURE 12
1ms
10ms
20
25
100
A