IRF7751TRPBF International Rectifier, IRF7751TRPBF Datasheet - Page 2
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IRF7751TRPBF
Manufacturer Part Number
IRF7751TRPBF
Description
MOSFET P-CH DUAL 30V 4.5A 8TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7751TRPBF.pdf
(8 pages)
Specifications of IRF7751TRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1464pF @ 25V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Configuration
Dual
Transistor Polarity
Dual P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 4.5 A
Power Dissipation
1 W
Mounting Style
SMD/SMT
Gate Charge Qg
29 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7751TRPBF
IRF7751TRPBFTR
IRF7751TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t < 10 sec.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1464 –––
–––
–––
–––
––– 0.020 –––
–––
-30
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
155
227
146
––– -100
5.5
5.0
23
19
29
13
16
80
-1.2
–––
-2.5
–––
100
–––
–––
233
120
–––
–––
-18
-15
-25
-1.0
35
28
35
55
44
20
24
V/°C
mΩ
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0MHz
D
D
V
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
GS
= -4.5A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V
= -15V
= 0V
= -25V
= -10V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
D
= -1.0A, V
= -1.0A
D
GS
GS
= -250µA
= -4.5A
= -4.5A
= -3.8A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S