IRF7530TRPBF International Rectifier, IRF7530TRPBF Datasheet - Page 2
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IRF7530TRPBF
Manufacturer Part Number
IRF7530TRPBF
Description
MOSFET N-CH DUAL 20V 5.4A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7530TRPBF.pdf
(8 pages)
Specifications of IRF7530TRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
1310pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
5.4 A
Power Dissipation
1.3 W
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7530TRPBF
IRF7530TRPBFTR
IRF7530TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7530TRPBF
Manufacturer:
International Rectifier
Quantity:
55 056
Part Number:
IRF7530TRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
R
I
S
SM
rr
d(on)
r
d(off)
f
DSS
fs
GSS
2
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
R
Min. Typ. Max. Units
0.60 –––
Starting T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1310 –––
–––
–––
–––
–––
–––
20
13
G
= 25Ω, I
0.01
–––
––– 0.030
––– 0.045
–––
–––
–––
–––
–––
180
150
–––
3.4
3.4
8.5
18
11
36
16
19
13
J
= 25°C, L = 2.6mH
AS
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
1.2
1.0
5.1
5.1
40
1.2
1.3
25
26
29
20
= 5.0A. (See Figure 10)
V/°C
nC
nC
pF
ns
V
S
V
Ω
V
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
showing the
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 5.4A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 10Ω
= V
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.5V, I
= 10V, I
= 12V
= -12V
= 4.5V
= 10V
= 0V
GS
Conditions
, I
D
S
F
D
D
Conditions
GS
= 250uA
D
D
GS
= 1.3A, V
= 1.3A
= 250µA
= 5.4A
= 5.4A
= 4.6A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 70°C
= 0V
G
D
S