IRF7530TRPBF International Rectifier, IRF7530TRPBF Datasheet - Page 5
![MOSFET N-CH DUAL 20V 5.4A MICRO8](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7530TRPBF
Manufacturer Part Number
IRF7530TRPBF
Description
MOSFET N-CH DUAL 20V 5.4A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7530TRPBF.pdf
(8 pages)
Specifications of IRF7530TRPBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 5.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
1310pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
Micro8™
Configuration
Dual
Transistor Polarity
Dual N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
5.4 A
Power Dissipation
1.3 W
Gate Charge Qg
18 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7530TRPBF
IRF7530TRPBFTR
IRF7530TRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7530TRPBF
Manufacturer:
International Rectifier
Quantity:
55 056
Part Number:
IRF7530TRPBF
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
www.irf.com
1000
100
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
80
60
40
20
0
25
Fig 10. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
50
Vs. Drain Current
J
J
75
DM
x Z
1
thJA
P
2
100
1
DM
+ T
TOP
BOTTOM
A
t
1
t
2
125
°
2.2A
4.0A
5.0A
I D
5
10
150