FDMA1027PT Fairchild Semiconductor, FDMA1027PT Datasheet

MOSFET P-CH 20V DUAL MICROFET

FDMA1027PT

Manufacturer Part Number
FDMA1027PT
Description
MOSFET P-CH 20V DUAL MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1027PT

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1027PTTR
©2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4
FDMA1027PT
Dual P-Channel PowerTrench
–20 V, –3 A, 120 m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
R
R
D
J
DS
GS
D
Max r
Max r
Max r
Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
RoHS Compliant
Free from halogenated compounds and antimony
oxides
, T
JA
JA
JA
JA
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
27
= 120 m at V
= 160 m at V
= 240 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Dual Operation)
Thermal Resistance, Junction to Ambient (Dual Operation)
MicroFET 2X2 Thin
GS
GS
GS
FDMA1027PT
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
-Pulsed
Device
PIN 1
D
D
D
= -3.0 A
= -2.5 A
= -1.0 A
T
A
D1
= 25 °C unless otherwise noted
D1
Parameter
S1
MicroFET 2x2 Thin
G2
®
G1
Package
MOSFET
D2
S2
T
T
T
1
A
A
D2
A
= 25 °C
= 25 °C
= 25 °C
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Applications
Battery management
Load switch
Battery protection
Reel Size
7 ’’
applications.
(Note 1c)
(Note 1d)
S1
(Note 1b)
(Note 1a)
(Note 1b)
G1
(Note 1a)
(Note 1a)
D2
1
3
2
1
2
3
Tape Width
It
8 mm
features
-55 to +150
Ratings
173
151
-20
1.4
0.7
69
±8
86
-3
-6
two
www.fairchildsemi.com
6
5
4
3000 units
Quantity
6
5
4
May 2009
independent
D1
G2
S2
Units
°C/W
°C
W
V
V
A

Related parts for FDMA1027PT

FDMA1027PT Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient (Dual Operation) JA Package Marking and Ordering Information Device Marking Device 27 FDMA1027PT ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev.B4 ® MOSFET General Description This device is designed specifically as a single package solution = -3 for the battery charge switch in cellular handset and other = -2 ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics I Maximum continuous Source-Drain Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev. °C unless otherwise noted J Test Conditions I = -250 -250 A, referenced to 25 ° - ...

Page 3

... Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev.B4 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. 2 pad copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. ...

Page 4

... Figure 3. Normalized On Resistance vs Junction Temperature 6 PULSE DURATION = 300 s DUTY CYCLE = 2% MAX 125 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev. °C unless otherwise noted J 3 1 0.5 1.5 2.0 2.5 0.28 0.24 0.20 0.16 0.12 ...

Page 5

... DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. Figure 11. ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev. °C unless otherwise noted J 700 600 500 400 300 200 100 1000 100 100 us ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev.B4 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMA1027PT Rev.B4 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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