FDS8858CZ Fairchild Semiconductor, FDS8858CZ Datasheet - Page 8
![MOSFET DUAL N/P-CHAN 30V SO-8](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS8858CZ
Manufacturer Part Number
FDS8858CZ
Description
MOSFET DUAL N/P-CHAN 30V SO-8
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS8858CZ.pdf
(10 pages)
Specifications of FDS8858CZ
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 8.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.6A, 7.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 10V
Input Capacitance (ciss) @ Vds
1205pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.017 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
27 S / 21 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V @ N Channel or +/- 25 V @ P Channel
Continuous Drain Current
8.6 A @ N Channel or 7.3 A @ P Channel
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8858CZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS8858CZ
Manufacturer:
Fairchild Semiconductor
Quantity:
44 647
Part Number:
FDS8858CZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS8858CZ-NL
Manufacturer:
FAIRCHILD
Quantity:
12 619
Part Number:
FDS8858CZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDS8858CZ Rev.B1
Typical Characteristics(Q2 P-Channel)
Figure 25
Figure 21. Gate Charge Characteristics
10
20
10
8
6
4
2
0
8
6
4
2
0
1
0.01
25
Current vs Ambient Temperature
0
Figure 23. Unclamped Inductive
R
I
D
θ
JA
= -7.3A
= 78
. Maximum Continuous Drain
Switching Capability
50
7
o
T
C/W
A
t
AV
, AMBIENT TEMPERATURE (
0.1
, TIME IN AVALANCHE(ms)
- Q
T
J
g
V
, GATE CHARGE(nC)
= 125
GS
V
DD
14
75
= -4.5V
= -15V
o
C
V
DD
T
1
100
V
21
J
= -10V
GS
= 25
V
= -10V
DD
o
C
= -20V
o
C )
125
28
10
150
35
30
T
J
= 25
8
o
C unless otherwise noted
4000
1000
Figure 24. Gate Leakage Current vs Gate to
100
10
10
10
10
10
10
0.01
0.1
-3
-4
-5
-6
-7
-8
10
60
0.1
1
0
0.1
V
Figure 22. Capacitance vs Drain
f = 1MHz
V
DS
THIS AREA IS
GS
LIMITED BY r
Figure 26. Forward Bias Safe
= 0V
= 0V
5
-V
-V
-V
GS
to Source Voltage
DS
DS
,
Source Voltage
Operating Area
, DRAIN TO SOURCE VOLTAGE (V)
GATE TO SOURCE VOLTAGE(V)
, DRAIN to SOURCE VOLTAGE (V)
DS(on)
10
1
1
T
T
J
SINGLE PULSE
T
R
T
J
J
A
= 125
θ
JA
= 25
15
= MAX RATED
= 25
= 135
o
o
o
C
C
C
o
C/W
20
C
C
C
10
iss
oss
rss
www.fairchildsemi.com
10
25
10s
10ms
100ms
1ms
1s
DC
30
30
80