BSO615N G Infineon Technologies, BSO615N G Datasheet
BSO615N G
Manufacturer Part Number
BSO615N G
Description
MOSFET DUAL N-CH 60V 2.6A 8-SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO615N_G.pdf
(8 pages)
Specifications of BSO615N G
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 2.6A, 4.5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615N G
BSO615NGT
BSO615NGXT
BSO615NT
BSO615NXTINTR
BSO615NXTINTR
SP000216316
BSO615NGT
BSO615NGXT
BSO615NT
BSO615NXTINTR
BSO615NXTINTR
SP000216316
G
° Pb-free lead plating; RoHS compliant
Marking
615N
2007-02-21
Rev. 1.1
Page 1
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BSO615N G Summary of contents
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