BSO203P Infineon Technologies, BSO203P Datasheet - Page 5
![MOSFET DUAL P-CH 20V 8.2A 8-SOIC](/photos/5/44/54435/bso203p_sml.jpg)
BSO203P
Manufacturer Part Number
BSO203P
Description
MOSFET DUAL P-CH 20V 8.2A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO203P.pdf
(8 pages)
Specifications of BSO203P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
1.2V @ 100µA
Gate Charge (qg) @ Vgs
48.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
2242pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO203PINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO203P
Manufacturer:
INFINEON
Quantity:
5 510
5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
Rev.1.2
A
A
90
70
60
50
40
30
20
10
35
25
20
15
10
0
5
0
0
0
DS
GS
); T
); |V
0.5
p
p
= 80 µs
2
= 80 µs
j
Vgs = -3.5V
=25°C
DS
|≥ 2 x |I
1
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
4
1.5
D
| x R
6
2
Vgs = -2.5V
Vgs = -3V
Vgs = -2V
DS(on)max
V
V
- V
- V
DS
GS
10
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: t p = 80 µs
fs
DS(on)
0.015
0.005
= f(I
0.03
0.02
0.01
Ω
S
60
40
30
20
10
0
0
0
0
D
= f (I
); T
5
Vgs = -2.5V
5
j
=25°C
D
GS
10
)
10
15
20
15
25
Vgs = -4V
Vgs = -4.5V
Vgs = -5V
Vgs = -6V
Vgs = -8V
Vgs = -10V
20
30
Vgs = -3V
35
25
2002-01-08
BSO203P
Vgs = -3.5V
40
A
- I
- I
A
D
D
35
50