BSO203P Infineon Technologies, BSO203P Datasheet - Page 6
![MOSFET DUAL P-CH 20V 8.2A 8-SOIC](/photos/5/44/54435/bso203p_sml.jpg)
BSO203P
Manufacturer Part Number
BSO203P
Description
MOSFET DUAL P-CH 20V 8.2A 8-SOIC
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO203P.pdf
(8 pages)
Specifications of BSO203P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
1.2V @ 100µA
Gate Charge (qg) @ Vgs
48.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
2242pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.021 Ohms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.2 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BSO203PINTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSO203P
Manufacturer:
INFINEON
Quantity:
5 510
9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
Rev.1.2
mΩ
pF
10
10
10
30
26
24
22
20
18
16
14
12
-60
4
3
2
0
DS
= f(T j )
)
D
-20
GS
= -8.2 A, V
=0, f=1 MHz
5
20
GS
60
98%
typ.
= -4.5 V
V
100
C
C
C
iss
rss
oss
°C
- V
T
j
DS
160
15
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
1.4
V
0.8
0.6
0.4
0.2
A
-1
1
0
-60
2
1
0
0
BSO203P
= f (T j )
SD
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
D
1.6
60
= -100 µA
2
100
2002-01-08
BSO203P
2.4
°C
V
V
98%
typ.
2%
T
SD
j
160
3