FDC6302P Fairchild Semiconductor, FDC6302P Datasheet - Page 3

• Manufacturer Part Number: FDC6302P
• Description: MOSFET P-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6302P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 11pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: -200mA
• Drain Source Voltage Vds: -25V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
-0.75
-0.25
0.15
0.05
-0.5
0.2
0.1
-1
0
0
-0.5
1.6
1.4
1.2
0.8
0.6
Figure 3. On-Resistance Variation
0
1
-50
Figure 5. Transfer Characteristics.
Figure 1. On-Region Characteristics.
V
DS
V
V
GS
I = -0.05A
D
GS
-25
= -5V
-1
= -5.0V
= -2.7V
with Temperature.
V
-4.5
-V
GS
1
DS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
0
J
, DRAIN-SOURCE VOLTAGE (V)
-1.5
-4.0
25
-3.5
T
J
2
= -55°C
50
-3.0
-2
-2.7
75
25°C
125°C
-2.5
3
-2.5
100
-2.0
125
-3
4
150
0.0001
1.5
0.5
25
20
15
10
0.01
5
0
2
1
0.5
0.1
Figure 4. On Resistance Variation with
Figure 6. Body Diode Forward Voltage
0
0
0
Variation with Source Current and
Figure 2. On-Resistance Variation with
T = 25°C
A
V
V
GS
GS
Drain Current and Gate Voltage.
Gate-To- Source Voltage.
1
= -2.0 V
= 0V
0.2
-V
-V
SD
0.05
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
,GATE TO SOURCE VOLTAGE (V)
-I
D
125 °C
0.4
, DRAIN CURRENT (A)
3
-2.5
T = 125°C
J
0.1
Temperature.
0.6
4
-2.7
25°C
-55°C
5
-3.0
0.8
0.15
6
-4.0
I = -0.05A
D
1
-3.5
FDC6302P Rev.C
7
-4.5
0.2
1.2
8