FDC6302P Fairchild Semiconductor, FDC6302P Datasheet - Page 4

• Manufacturer Part Number: FDC6302P
• Description: MOSFET P-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6302P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 11pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: -200mA
• Drain Source Voltage Vds: -25V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical And Thermal Characteristics
0.05
0.02
0.01
8
6
4
2
0
0.8
0.5
0.2
0.1
0
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
1
R
I
SINGLE PULSE
D
0.05
0.02
0.01
0.5
0.2
0.1
JA
= -0.2A
0.0001
V
1
T = 25°C
GS
=See Note 1b
A
0.1
= -2.7V
2
D = 0.5
- V
0.2
0.1
0.05
DS
0.02
0.01
Single Pulse
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
0.2
0.001
5
Figure 11. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
V
DS
= -5V
0.3
10
-15
0.4
0.01
-10
20
0.5
40
0.1
t , TIME (sec)
1
25
15
10
5
4
3
2
1
0
5
3
2
1
0.01
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum Power
f = 1 MHz
V
GS
1
.
= 0 V
Dissipation.
0.3
0.1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
1
T - T
Duty Cycle, D = t / t
10
J
R
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
2
= See Note 1b
R
10
JA
1
SINGLE PULSE
(t)
JA
5
JA
2
100
T = 25°C
=See note 1b
A
10
C iss
C oss
C rss
300
FDC6302P Rev.C
100
15
300
25