FDC3601N Fairchild Semiconductor, FDC3601N Datasheet - Page 4
![MOSFET N-CH DUAL 100V SSOT-6](/photos/5/44/54442/supersot-6_pkg_sml.jpg)
FDC3601N
Manufacturer Part Number
FDC3601N
Description
MOSFET N-CH DUAL 100V SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDC3601N.pdf
(5 pages)
Specifications of FDC3601N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
500 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
153pF @ 50V
Power - Max
700W
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.6 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
1A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Threshold Voltage Vgs Typ
2.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDC3601N
Manufacturer:
FSC
Quantity:
15 600
Company:
Part Number:
FDC3601N
Manufacturer:
Fairchild Semiconductor
Quantity:
59 148
Typical Characteristics
10
0.001
8
6
4
2
0
0.01
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.1
0.001
I
D
0.01
R
= 1.0A
0.1
DS(ON)
0.0001
SINGLE PULSE
R
1
JA
V
T
GS
A
= 180
LIMIT
= 25
= 10V
D = 0.5
1
o
o
C
C/W
V
0.2
1
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
Q
g
0.02
, GATE CHARGE (nC)
0.01
0.001
SINGLE PULSE
DC
2
10
1s
Figure 11. Transient Thermal Response Curve.
100ms
10ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1ms
V
DS
= 30V
100
0.01
100 s
3
70V
50V
1000
4
0.1
t
1
, TIME (sec)
200
150
100
50
40
30
20
10
50
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
RSS
1
C
0.01
OSS
10
V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
C
ISS
20
t
10
1
, TIME (sec)
1
P(pk
30
Duty Cycle, D = t
T
R
10
J
R
)
JA
- T
JA
(t) = r(t) + R
100
A
SINGLE PULSE
R
t
= 180°C/W
1
= P * R
t
JA
T
2
A
40
= 180°C/W
100
FDC3601N Rev C(W)
= 25°C
V
f = 1MHz
GS
JA
= 0 V
1
(t)
JA
/ t
2
1000
50
1000