FDG6335N Fairchild Semiconductor, FDG6335N Datasheet - Page 15
![MOSFET N-CH 20V 700MA SOT-363](/photos/5/44/54456/sot-363_pkg_sml.jpg)
FDG6335N
Manufacturer Part Number
FDG6335N
Description
MOSFET N-CH 20V 700MA SOT-363
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG6335N.pdf
(5 pages)
Specifications of FDG6335N
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
2.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1609797
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Pg. 15