FDMA6023PZT Fairchild Semiconductor, FDMA6023PZT Datasheet

MOSFET P-CH DUAL 20V 6MICROFET

FDMA6023PZT

Manufacturer Part Number
FDMA6023PZT
Description
MOSFET P-CH DUAL 20V 6MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA6023PZT

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.6A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
885pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-UMLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.6 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Module Configuration
Dual
Continuous Drain Current Id
-3.6A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
60mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA6023PZTTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA6023PZT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMA6023PZT
0
©2009 Fairchild Semiconductor Corporation
FDMA6023PZT Rev.B1
FDMA6023PZT
Dual P-Channel PowerTrench
-20 V, -3.6 A, 60 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
R
R
D
DS
GS
D
J
θJA
θJA
θJA
θJA
Max r
Max r
Max r
Max r
Low Profile-0.55 mm maximum - in the new package
MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony oxides
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
623
= 60 mΩ at V
= 80 mΩ at V
= 110 mΩ at V
= 170 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
MicroFET 2x2
GS
GS
GS
GS
FDMA6023PZT
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
-Continuous
-Pulsed
Device
Pin 1
D
D
D
D
= -3.6 A
= -3.0 A
= -2.0 A
= -1.0 A
D1
T
A
S1
D1
= 25 °C unless otherwise noted
G2
Parameter
G1
MicroFET 2X2 Thin
S2
®
D2
Package
MOSFET
D2
1
T
T
T
A
A
A
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultraportable
P-Channel MOSFETs with low on-state resistance for minimum
conduction losses. When connected in the typical common
source configuration, bi-directional current flow is possible.
The MicroFET 2X2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
Applications
= 25 °C
= 25 °C
= 25 °C
Battery protection
Battery management
Load switch
Reel Size
S1
G1
D2
7 ’’
applications.
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
1
2
3
Q1
Tape Width
It
8mm
features
-55 to +150
Ratings
Q2
-3.6
173
151
-20
-15
1.4
0.7
±8
86
69
6
4
two
5
D1
S2
G2
www.fairchildsemi.com
3000 units
June 2009
Quantity
independent
Units
°C/W
°C
W
V
V
A

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FDMA6023PZT Summary of contents

Page 1

... Thermal Resistance for Dual Operation, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 623 FDMA6023PZT ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 ® MOSFET General Description = -3.6 A This device is designed specifically as a single package solution D for the battery charge switch in cellular handset and other = -3 ...

Page 2

... Drain-Source Diode Characteristics I Maximum Continuous Drain-Source Diode Forward Current S V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev. °C unless otherwise noted J Test Conditions = -250 µ -250 µA, referenced to 25 ° ...

Page 3

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev. °C unless otherwise noted J 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material pad copper, 1.5 " ...

Page 4

... Junction Temperature 15 µ PULSE DURATION = 300 s DUTY CYCLE = 2.0% MAX - 125 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev. °C unless otherwise noted -2. -1. -1.5V GS µ s 1.5 2 100 125 150 - 0.001 1.5 2.0 2 ...

Page 5

... Figure 9. Forward Bias Safe Operation Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE R 0.01 0.005 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev. °C unless otherwise noted -10V -15V 100 173 C/W θ ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMA6023PZT Rev.B1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

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